Ion Implantation and Beam Processing

Ion Implantation and Beam Processing
Author : J. S. Williams
Publisher : Academic Press
Total Pages : 432
Release : 2014-06-28
ISBN 10 : 9781483220642
ISBN 13 : 1483220648
Language : EN, FR, DE, ES & NL

Ion Implantation and Beam Processing Book Description:

Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable.


RELATED BOOKS:
Ion Implantation and Beam Processing
Language: en
Pages: 432
Authors: J. S. Williams, J. M. Poate
Categories: Technology & Engineering
Type: BOOK - Published: 2014-06-28 - Publisher: Academic Press

Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision
Ion Implantation and Synthesis of Materials
Language: en
Pages: 263
Authors: Michael Nastasi, James W. Mayer
Categories: Science
Type: BOOK - Published: 2007-05-16 - Publisher: Springer Science & Business Media

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also
Ion Implantation and Ion Beam Processing of Materials
Language: en
Pages:
Authors: Michael Nastasi, James W. Mayer
Categories: Science
Type: BOOK - Published: - Publisher:

Books about Ion Implantation and Ion Beam Processing of Materials
Ion Implantation and Ion Beam Processing of Materials
Language: en
Pages: 786
Authors: G. K. Hubler
Categories: Ion bombardment
Type: BOOK - Published: 1984 - Publisher: North Holland

Books about Ion Implantation and Ion Beam Processing of Materials
Ion Implantation and Synthesis of Materials
Language: en
Pages: 263
Authors: Michael Nastasi, James W. Mayer
Categories: Science
Type: BOOK - Published: 2009-09-02 - Publisher: Springer

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also